? ? ? ? guilin strong micro-electronics co.,ltd. gm a1505 features c pnp low frequency amplifier transistor maximum ratings (t a =25 ) ~? characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo -35 v collector-emitter voltage ?O - lO? v ceo -30 v emitter-base voltage lO - O? v ebo - 5 v collector current-continuous ?O - Bm ic -50 0 ma collector power dissipation ?O? p c 225 mw junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150 device marking gm a1505 o y g(r) mark azo azy azg h fe 1 70~140 120~240 200~400
? ? ? ? guilin strong micro-electronics co.,ltd. g ma1505 electrical characteristics (t a =25 unless otherwise noted of , ?? 25 ) characteristic ? symbol ? test condition y?l min ? t yp ? max ? unit collector cutoff current ?O? i cbo v cb = -35 v, i e =0 - 0.1 a emitter cutoff current lO? i ebo v eb = - 5v, i c =0 - 0.1 a collector-base breakdown voltage ?O - O? v (br)cbo i c = - 100 a -35 v collector-emitter breakdown voltage ?O - lO? v (br)ceo i c = - 1.0ma -30 v emitter-base breakdown votlage lO - O? v (br)ebo i e = - 100 a - 5 v dc current gain ? h fe 1 v ce = -1 v, i c = -100 ma 70 4 00 dc current gain ? h fe 2 v ce = -6 v, i c = -400 ma 25(o) 40(y) collector-emitter saturation voltage ?O - lO?? v ce(sat) i c = -1 00ma, i b = -1 0ma -0.1 - 0. 25 v base -emitter saturation voltage O - lO?? v b e(sat) i c = - 100ma, i b = - 10 ma - 1.0 v base-emitter saturation O - lO? v be v ce = -1 v, i c = - 1 0 0ma -0.8 -1.0 v transition frequency l f t v ce = -6 v, i c = -2 0ma 20 0 mhz collector output capacitance ? c ob v cb = -6 v,i e =0, f=1mhz 13 pf
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